The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

• Hichem Ferhati,
• Fayçal Djeffal and
• Toufik Bentrcia

Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177

• -effect transistor (JL TFET); nanoscale; SiGe; Introduction In the last years, the continuous miniaturization of nanoscale transistors induces new challenges including short-channel effects (SCEs) and high power consumption, which prevent incorporating conventional metal-oxide semiconductor field-effect

• , where the optimized design exhibits an improved switching behavior at the nanoscale level. These results make the optimized device suitable for designing digital circuit for high-performance nanoelectronic applications. Keywords: ambipolar conduction; heterojunctions; junctionless tunneling field